2SB1197KRLT1 Description
WILLAS Low Frequency Transistor Batch process design, excellent power dissipation offers better reverse leakage current and . FM120-M+ 2SB1197KxLT1 THRU Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM1200-M+.
2SB1197KRLT1 Key Features
- Low power loss, high efficiency. current capability, low forward voltage drop
- High FEATURE surge capability
- High ƽHigh current capacity in pact package. for overvoltage protection
- Guardring IC = í0.8A. high-speed switching
- Ultra ƽEpitaxial planar type
- Silicon epitaxial planar chip, metal silicon junction. ƽNPN plement: 2SD1781K
- 0.146(3.7) 0.130(3.3)
- Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H
- Case : Molded DEVICE MARKING AND ORDERING INFORMATION
- Terminals :Plated terminals, solderable per MIL-STD-750