Part 2SB1197KRLT1
Description Low Frequency Transistor
Category Transistor
Manufacturer WILLAS
Size 422.74 KB
WILLAS
2SB1197KRLT1

Overview

  • Low profile surface mounted application in order to optimize board space. PNP Silicon
  • Low power loss, high efficiency. current capability, low forward voltage drop.
  • High FEATURE surge capability.
  • High ƽHigh current capacity in compact package. for overvoltage protection.
  • Guardring IC = í0.8A. high-speed switching.
  • Ultra ƽEpitaxial planar type.
  • Silicon epitaxial planar chip, metal silicon junction. ƽNPN complement: 2SD1781K
  • Lead-free parts meet environmental standards of
  • 0.146(3.7) 0.130(3.3)
  • 012(0.3) Typ.