WILLAS BCX55
Plastic-Encapsulate Transistors
FEATURES
● Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.● Low profile surface mounted application in order to optimize board space.
● Low power loss, high efficiency. TRANSIS●● HHTiiOgghhRscuu(NrrgrePenNct ac)paapbaibliitlyit.y, low forward voltage drop.
● Guardring for overvoltage protection. FEATUR●●ESUSilltircaohnigehp-itsapxeiaeldpslawnitacrhcinhgip. , metal silicon junction. z PNP● LCeoamd-fpreleempaerntstsmteoetBeCnvXir5on1m,BeCntXal5s2ta,BndCaXrd5s3of z Low● VRMooIHLlt-SaSgpTreDod-1uc9t5f0o0r /228 packing code suffix "G" z High HCaulorgreennftree product for packing code suffix "H" z Pb-FMreechpaacnkiacgaelids avtailable RoH●SEpporxoyd: uUcLt94fo-Vr 0praactekdinflgamceordeetasrduafnfitx ”G” Halo● gCeansef:reMeolpderod dpluacstticfo, Sr OpDa-c1k2i3nHg code suffix “H”
● Terminals :Plated terminals, solderable per MIL-STD-75 , 0 Method 2026 APPLIC●APToIlOarNityS: Indicated by cathode band z Driv●eMr oSutnatginegsPoosfitAiound:iAonAy mplifiers Package outline SOD-123H SOT-89 0.146(3.7) 0.130(3.3) 1.