The enhancement mode MOS is
extremely high density cell and low on-resistance. Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current Total Power Dissipation
Continuous Pulsed TA=25℃ TA=125℃
TA=25℃ TA=70℃
Operating and Storage Junction Temperature Range
WWDϲEϮϬsϭϬ
DFN2.
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PRIMARY CHARACTERISTICS
VDS(V)
RDS(on)(mΩ)
ID(A)
-20 14@VGS=-4.5V
-10
FEATURES The enhancement mode MOS is
extremely high density cell and low on-resistance.
PPM6N20V10 Datasheet
