Datasheet Details
| Part number | SBR13003B1 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 282.81 KB |
| Description | NPN Power Transistor |
| Datasheet | SBR13003B1_WINSEMISEMICONDUCTOR.pdf |
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Overview: SBR13003B1 High Voltage Fast-Switching NPN Power Transistor.
| Part number | SBR13003B1 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 282.81 KB |
| Description | NPN Power Transistor |
| Datasheet | SBR13003B1_WINSEMISEMICONDUCTOR.pdf |
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|
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This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP = 5ms 1.5 25 1.14 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3.12 89 Units ℃/W ℃/W Jan 2009.
Rev.
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