Datasheet Details
| Part number | WFP12N65 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 635.33 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFP12N65 Datasheet
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General Description
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Key Features
- 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V.
- Ultra-low Gate Charge(Typical 51.7nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃) General.