WSP10D100 Key Features
- 10A(1×5A),100V
- VF(max)=0.60V(@TJ=125℃)
- Low power loss, high efficiency
- mon cathode structure
- Guard ring for over voltage protection, High reliability
- Maximum Junction Temperature Range(175℃)
- Part: WSP10D100
- Manufacturer: WINSEMI SEMICONDUCTOR
- Size: 224.90 KB
Related WINSEMI SEMICONDUCTOR Datasheets
| Part Number | Description |
|---|---|
| WSP20D100 | Power Schottky Rectifier |
| WSP20D65 | Power Schottky Rectifier |
WSP10D100 Description
Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 .DataSheet.in WSP10D100 (per diode) Characteristics Reverse leakage current Symbol IR Test Condition VR = VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min - Typ.