SFD25N06BT
Key Features
- RDS(ON) =32mΩ (Max.) @ VGS = 10V, ID = 10A
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Part: SFD25N06BT
- Description: Silicon N-Channel MOSFET
- Category: MOSFET
- Manufacturer: WINSEMI
- Size: 727.82 KB