Datasheet Summary
Features
- 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V
- Ultra-low Gate charge(Typical 70nC)
- Low Crss (Typical 160pF)
- Improved dv/dt capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(175℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated...
