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SFP70N06 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power manag

Key Features

  • 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 70nC).
  • Low Crss (Typical 160pF).
  • Improved dv/dt capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(175℃) SFP70N06 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number SFP70N06
Manufacturer WINSEMI
File Size 569.59 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SFP70N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V � Ultra-low Gate charge(Typical 70nC) � Low Crss (Typical 160pF) � Improved dv/dt capability � 100%Avalanche Tested � Maximum Junction Temperature Range(175℃) SFP70N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.