AP512 Datasheet | WJ Communication

Features - 2110 - 2170 MHz - 28.5 d B Gain - -55 d Bc ACLR @ 28 d Bm W-CDMA linear power The munications Edge TM Product Information UMTS-band 8W HBT Amplifier Module Product Description The AP512 is a high dynamic range power amplifier in a Ro HS-pliant flange-mount package. The multi-stage amplifier module has 28.5 d B gain, while being able to achieve high performance for UMTS-band applications with +39 d Bm of pressed 1d B power. The module has been internally optimized for linearity to provide -55 d Bc ALCR at 28 d Bm power for W-CDMA applications. The AP512 uses a high reliability In Ga P/Ga As HBT process technology and does not require any external matching ponents. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. Functional Diagram - +39 d Bm P1d B - +12 V Single Supply - Power Down Mode - Bias Current Adjustable - Ro HS-plaint flange-mount pkg Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications - Final stage amplifiers for Repeaters - Optimized for driver amplifier PA The AP512 is targeted for use as a driver or final stage mobile infrastructure amplifier in wireless infrastructure where high linearity and high power is required. This bination makes the device an excellent candidate for next generation multi-carrier 3G base stations or repeaters using the UMTS frequency band. Specifications (1) Parameter Operational Bandwidth Test Frequency Adjacent Channel Leakage Ratio Power Gain Input Return Loss Output Return Loss Output P1d B Output IP3 Operating Current (2) Quiescent Current, Icq (2) Device Voltage, Vcc Device Voltage, Vpd (3) Ruggedness Units MHz MHz d Bc d B d B d...