AP622
AP622 is UMTS-band 4W HBT Amplifier Module manufactured by WJ Communication.
Description
The AP622 power amplifier module is a two-stage power amplifier module that operates over the frequency range of 2110
- 2170 MHz and is housed in a small, Ro HSpliant, flange-mount package. The multi-stage amplifier module has a 28 d B gain, P1d B of 35d Bm, and ACLR of
- 55d Bc at +23 d Bm output power for WCDMA applications. The AP622 uses a +28V high reliability In Ga P/Ga As HBT process technology and does not require any external matching ponents. The amplifier module operates off a +28V supply; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP622 is targeted for use as a driver stage amplifier in wireless infrastructure where high linearity and high power is required. This bination makes the device an excellent candidate for next generation multi-carrier 3G base stations.
UMTS-band 4W HBT Amplifier Module
Product Features
- 2.11
- 2.17 GHz
- 28 d B Gain
- -55 d Bc ACLR @ +23 d Bm Pavg
- +35 d Bm P1d B
- +28 V Supply
- Power Down Mode
- Ro HS-pliant flange-mount pkg
Functional Diagram
Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground
Applications
- WCDMA Power Amplifiers
- Repeaters
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 d B @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 m A
Parameter
Operational Bandwidth Output Channel Power Power Gain ACLR Operating Current, Icc Collector Efficiency Output P1d B Quiescent Current, Icq Vpd Vcc
Units
MHz d Bm d B d Bc m A % d Bm m A V V
Min
Typ
- 2170 +23 28 -55 135 5 +35 120 +5 +28
Max
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature
Rating...
