FEATURES
x 400 – 2300 MHz x +31.5 dBm P1dB x +46 dBm Output IP3 Product DESCRIPTION
All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the ECP100D to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram Vbias N/C 14 16 Vref 1 N/C 2 RF IN 3 N/C 4 5 N/C 6 N/C 7 N/C 8 N/C N/C 15 N/C 13 12 N/C 11 RF OUT 10 RF OUT 9 N/C x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply (+5V) x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package APPLICATIONS
x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security Function Vref RF Input RF Output Vbias GND N/C or GND Pin No. 1 3 10, 11 16 Backside Paddle 2, 4-9, 12-15 Specifications (1) Parameter Operational Bandwidth Test Frequency...