FP1189 Description
The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB pression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ munications’ long history of producing high reliability and quality ponents.