WS27C256L Description
The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.
WS27C256L Key Features
- High Performance CMOS
- 120 ns Access Time
- Fast Programming
- DESC SMD No. 5962-86063
- Ceramic Leadless Chip Carrier (CLLCC)
- EPI Processing
- Latch-Up Immunity to 200 mA
- ESD Protection Exceeds 2000 Volts
- 300 Mil DIP or Standard 600 Mil DIP
- JEDEC Standard