DHD020N03
Description
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the Ro HS standard.
2 Features
- Fast switching
- Low on resistance(Rdson≤2.0mΩ)
- Low gate charge(Typ: 65n C)
- Low reverse transfer capacitances(Typ: 435p F)
- 100% single pulse avalanche energy test
- 100% ΔVDS test
2D
VDSS = 30V
RDS(on) (TYP)= 1.5mΩ
3S
ID = 210A
3 Applications
- SPMS applications
TO-220C TO-220F TO-262
- Load switch
- Power management
- BMS System
TO-263
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
TO-252B TO-251B
Parameter
Symbol
Rating
DH020N03/ DHI020N03/DHE020N03 /DHB020N03/DHD020N03
DHF020 N03
Units
Drian-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
±20
Continuous Drain Current
TC=25℃...
