WeEn Semiconductors BT131-600
The rate of rise of current should not exceed 3A/μs.| Part No. | BT131-600 |
|---|---|
| Datasheet | BT131-600 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | 4Q Triac |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High blocking voltage capability● Very sensitive gate
● Planar passivated for voltage ruggedness and reliability
● Triggering in all four quadrants
● Direct interfacing to logic level ICs
● Direct interfacing to low power gate drive circuits and microcontrollers 3.
APPLICATIONS
● General purpose motor control● General purpose switching
● Air conditioner indoor fan control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Conditions full sine wave; Tlead ≤ 51 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig.
