WeEn Semiconductors BT137S-800G
4Q Triac
| Part No. | BT137S-800G |
|---|---|
| Datasheet | BT137S-800G Download |
| Manufacturer |  WeEn Semiconductors |
| Description | 4Q Triac |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High blocking voltage capability● Least sensitive gate for highest noise immunity
● Planar passivated for voltage ruggedness and reliability
● Surface-mountable package
● Triggering in all four quadrants 3.
APPLICATIONS
● General purpose motor control● General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static character
