WeEn Semiconductors BT148-600R
The rate of rise of current should not exceed 15 A/μs.| Part No. | BT148-600R |
|---|---|
| Datasheet | BT148-600R Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Sensitive gate● Planar passivated for voltage ruggedness and reliability
● Direct triggering from low power drivers and logic ICs 3.
APPLICATIONS
● Adapters● Battery powered applications
● Industrial automation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 113 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 113 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics [1] IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 Min Typ Max Unit - - 600 V - - 2.5 A - - 4A - - 35 A - - 38 A - - 125 °C - 15 200 µA - 50 - V/µs WeEn Semiconductors BT148-600R SCR [1] Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
