WeEn Semiconductors BT151-800R
SCR
| Part No. | BT151-800R |
|---|---|
| Datasheet | BT151-800R Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High bidirectional blocking voltage capability● High surge current capability
● High thermal cycling performance 3.
APPLICATIONS
● Ignition circuits● Motor control
● Protection circuits
● Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature IT(AV) average on-state current half sine wave; Tmb ≤ 109 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 109 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Dynamic characteristics Min Typ Max Unit - - 800 V - - 800 V - - 120 A - - 132 A - - 125 °C - - 7.5 A - - 12 A - 2 15 mA WeEn Semiconductors BT151-800R SCR Symbol dVD/dt Parameter rate of rise of off-state voltage Conditions VDM = 536 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig.
