WeEn Semiconductors BT236X-600
4Q Triac
| Part No. | BT236X-600 |
|---|---|
| Datasheet | BT236X-600 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | 4Q Triac |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High blocking voltage capability● Planar passivated for voltage ruggedness and reliability
● Less sensitive gate for improved noise immunity
● Triggering in all four quadrants
● Isolated package 3.
APPLICATIONS
● General purpose motor control● General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Symbol Parameter Static characteristics IGT gate trigger current Conditions full sine wave; Th ≤ 88 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 Values Unit 600 V 6A 65 A Min Typ Max Unit - 5 35 mA - 8 35 mA - 11 35 mA - 30 70 mA WeEn Semiconductors 5.
