WeEn Semiconductors BT258-800R
Logic level thyristor
| Part No. | BT258-800R |
|---|---|
| Datasheet | BT258-800R Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Logic level thyristor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High blocking voltage suitable for high voltage applications● Sensitive gate suitable for logic level controls 3.
APPLICATIONS
● General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 111 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature [1] Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 [1] Operation above 110°C may require the use of a gate to cathode resistor of 1kΩ or less. Min Typ Max Unit - - 800 V - - 5A - - 8A - - 75 A - - 82 A - - 125 °C - 50 200 µA 50 100 - V/µs WeEn Semiconductors 5.
