WeEn Semiconductors BT258S-800R
thyristor
| Part No. | BT258S-800R |
|---|---|
| Datasheet | BT258S-800R Download |
| Manufacturer |  WeEn Semiconductors |
| Description | thyristor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Direct interfacing with low power drivers and microcontrollers● High bidirectional blocking voltage capability
● High thermal cycling performance
● Planar passivated for voltage ruggedness and reliability
● Sensitive gate suitable for logic level controls
● Surface mountable package 3.
APPLICATIONS
● General purpose switching and phase control● Protection circuits
● Ignition circuits, CDI for 2- and 3-wheelers
● Motor control - e.g. small kitchen appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 111 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature [1] Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig.
