WeEn Semiconductors BTA2008-1000D
This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.| Part No. | BTA2008-1000D |
|---|---|
| Datasheet | BTA2008-1000D Download |
| Manufacturer |  WeEn Semiconductors |
| Description | 3Q Hi-Com Triac |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● 3Q technology for improved noise immunity● Direct gate triggering from low power drivers and logic ICs
● High commutation capability with very sensitive gate
● High voltage capability
● Planar passivated for voltage ruggedness and reliability
● Triggering in three quadrants only
● Very sensitive gate for easy logic level triggering 3.
APPLICATIONS
● Low power motor controls● Small inductive loads e.g. solenoids, door locks, water valves
● Small loads in large white goods 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tlead ≤ 70 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig.
