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BTA312B-800B Datasheet PDF

WeEn Semiconductors BTA312B-800B

This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
Part No. BTA312B-800B
Datasheet BTA312B-800B Download
Manufacturer
WeEn Semiconductors
Description 3Q Hi-Com Triac
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BTA312B-800B datasheet page 1 preview

FEATURES AND BENEFITS

● 3Q technology for improved noise immunity
● High commutation capability with maximum false trigger immunity
● High voltage capability
● Less sensitive gate for high noise immunity
● Planar passivated for voltage ruggedness and reliability
● Surface mountable package
● Triggering in three quadrants only
● Very high immunity to false turn-on by dV/dt 3.

APPLICATIONS

● Electronic thermostats (heating and cooling)
● High power motor controls e.g. washing machines and vacuum cleaners
● Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak onstate current full sine wave; Tmb ≤ 100 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig 4; Fig 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig.
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