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BTA316-600B0 Datasheet PDF

WeEn Semiconductors BTA316-600B0

This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
Part No. BTA316-600B0
Datasheet BTA316-600B0 Download
Manufacturer
WeEn Semiconductors
Description 3Q Hi-Com Triac
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BTA316-600B0 datasheet page 1 preview

FEATURES AND BENEFITS

● 3Q technology for improved noise immunity
● High immunity to false turn-on by dV/dt
● High minimum IGT for guaranteed immunity to gate noise
● High voltage capability
● Least sensitive gate for highest noise immunity
● Planar passivated for voltage ruggedness and reliability
● Triggering in three quadrants only
● Very high commutation capability with maximum false trigger immunity 3.

APPLICATIONS

● Electronic thermostats (heating and cooling)
● High power motor controls e.g. washing machines and vacuum cleaners
● Rectifier-fed DC inductive loads e.g. DC motors and solenoids
● Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig.
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