BTA45-800B Datasheet | WeEn

description Planar passivated four quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. This triac will mutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits - High current TRIAC - Low thermal resistance - High junction operating temperature capability (Tj(max) = 150 °C) - High voltage capability - Planar passivated for voltage ruggedness and reliability - Insulated tab rated at 2500 V rms 3. Applications - High current / high surge applications - High power / industrial controls -- e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak onstate current full sine wave; Tmb ≤ 96 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 full sine wave; tp = 16.7 ms; Tj(init) = 25 °C Tj junction temperature Values 800 45 450 495 150 Unit V A A A °C We En Semiconductors 4Q Triac Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics d VD/dt rate of rise of off-state voltage d I/dt rate of change of mutating current Conditions VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ GTj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- GTj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+ Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 63.6 A; Tj = 25 °C; Fig. 10 VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 20A; d V/dt = 20 V/μs; gate open circuit VD = 400 V; Tj = 150...