WeEn Semiconductors BYV32EB-200P
Dual ultrafast power diode
| Part No. | BYV32EB-200P |
|---|---|
| Datasheet | BYV32EB-200P Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Dual ultrafast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low on-state loss● Ultra low leakage
● Fast switching
● Soft recovery characteristic minimizes power consuming oscillations
● High reverse surge capability
● High thermal cycling performance
● Low thermal resistance 3.
APPLICATIONS
● Home appliance power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IO(AV) average output current δ = 0.5 ; square-wave pulse; Tmb ≤ 143 °C; both diodes conducting; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 μs; Tmb ≤ 151 °C; square-wave pulse ; per diode IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 tp = 8.3 ms; Tj(init) = 25
