WeEn Semiconductors N0118GA
SCR
| Part No. | N0118GA |
|---|---|
| Datasheet | N0118GA Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High voltage capability● Planar passivated for voltage ruggedness and reliability
● Ultra sensitive gate 3.
APPLICATIONS
● Electronic ballasts● Safety shut down and protection circuits
● Sensing circuits
● Smoke detectors
● Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 67 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 13; Fig. 14 Min Typ Max Unit - - 600 V - - 0.51 A - - 0.8 A - - 8 A - - 9 A - - 125 °C 0.5 - 7 µA 75 - - V/µs WeEn Semiconductors N0118GA SCR 5.
