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NXPLQSC10650 - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • Super low capacitance and recovery charge.
  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3.

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Datasheet Details

Part number NXPLQSC10650
Manufacturer WeEn
File Size 422.19 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPLQSC10650 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPLQSC10650 Silicon Carbide Diode Rev.02 - 07 November 2019 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies. RoHS Product data sheet halogen-Free 2. Features and benefits • Super low capacitance and recovery charge • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.