WeEn Semiconductors NXPLQSC20650W
Silicon Carbide Diode
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● Electrical Vehicle Charger
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average output Tmb ≤ 74 °C; δfactor = 0.5 ; square- current wave pulse; both diodes conducting; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Static characte