WeEn Semiconductors NXPSC04650
Silicon Carbide Diode
| Part No. | NXPSC04650 |
|---|---|
| Datasheet | NXPSC04650 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Power factor correction● Telecom/Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED/OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 136 °C; square-wave pulse; Fig. 1; Fig. 2 Tj junction temperature Static characteristics VF forward voltage IF = 4 A; Tj = 25 °C; Fig. 4 Min Typ Max Unit - - 650 V - - 4A - - 175 °C - 1.5 1.7 V WeEn Semiconductors NXPSC04650 Silicon Carbide Diode Symbol Parameter Dynamic characteristics Qr recovered charge Conditions IF = 4 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5 Min Typ Max Unit - 7 - nC 5. Pinning information Table 2.
