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NXPSC08650 - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3.

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Datasheet Details

Part number NXPSC08650
Manufacturer WeEn
File Size 477.55 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC08650 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPSC08650 Silicon Carbide Diode Rev.02 - 04 November 2019 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies. RoHS Product data sheet halogen-Free 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.