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NXPSC08650X - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • Insulated package rated at 2500V RMS 3.

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Datasheet Details

Part number NXPSC08650X
Manufacturer WeEn
File Size 267.27 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC08650X Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPSC08650X Silicon Carbide Diode 5 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • Insulated package rated at 2500V RMS 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.