WeEn Semiconductors NXPSC10650D
Silicon Carbide Diode
| Part No. | NXPSC10650D |
|---|---|
| Datasheet | NXPSC10650D Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Power factor correction● Telecom/Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED/OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 113 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 6 IF = 10 A; Tj = 150 °C; Fig. 6 Min Typ Max Unit - - 650 V - - 10 A - 1.5 1.7 V - 1.8 2.1 V WeEn Semiconductors NXPSC10650D Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
Simplified outline 1 n.c. not connected 2 K cathode[1] 3 A anode mb K mounting base; connected to cathode DPAK (TO252NS) [1] It is not possible to connect to pin 2 of the TO252 package.
