WeEn Semiconductors WB10SC120AL
This document contains data from the objective specification for product development.| Part No. | WB10SC120AL |
|---|---|
| Datasheet | WB10SC120AL Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Schottky diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Extremely fast reverse recovery time● Low figure of merit (Qr*VF)
● Highly stable switching performance
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 10 A; Tj = 25 °C IF = 10 A; Tj = 150 °C Qr** recovered charge IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C Min Typ Max Unit - - 1200 V - - 10 A - 1.42 1.65 V - 1.88 2.3 V - 25 - nC 4. Ordering information Table 2. Ordering information Type number Orderable part number WB10SC120AL WB10SC120ALZ Name Wafer
DESCRIPTION
Bare die on wafer Version Die WeEn Semiconductors WB10SC120AL Silicon Carbide Schottky diode - Bare Die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
