WB10SC120AL Overview
Silicon Carbide Schottky diode (Bare Die).
WB10SC120AL Key Features
- Extremely fast reverse recovery time
- Low figure of merit (Qr-VF)
- Highly stable switching performance
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS pliant
- 1.42 1.65 V
- 1.88 2.3 V