WeEn Semiconductors WB15FV60AL
This document contains data from the objective specification for product development.FEATURES AND BENEFITS
● Fast reverse recovery● Low leakage current
● Low forward voltage drop
● Bare die 3. Quick reference data Table 1. Quick reference data Symbol VRRM IF(AV) Parameter Conditions repetitive peak reverse voltage average forward current δ = 0.5; square-wave pulse Symbol Parameter Static characteristics Conditions VF forward voltage IF = 5 A; Tj = 25 °C Dynamic characteristics Qr recovered charge IF = 1 A; VR = 20 V; dIF/dt = 20 A/μs; Tj = 25 °C trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C Notes Values Unit [1] 600 V [2] 15 A Notes Min Typ Max Unit [2] 1.07 1.20 1.36 V [2] - [2] - - 50 nC 30 - ns 4. Ordering information Table 2. Ordering information Product type Orderable part number WB15FV60AL WB15FV60ALZ
DESCRIPTION
Bare die on wafer Packing method Unsawn wafer, Vacuum packing WeEn Semiconductors WB15FV60AL Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).