WG30R135W1 Description
WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency for soft mutation.
WG30R135W1 Key Features
- Reverse Conducting IGBT with Monolithic Body Diode
- Maximum Junction Temperature 175 °C
- Low Conduction Losses
- Positive Temperature efficient for Easy Parallel Operating
- EMI Improved Design