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WG30R135W1 Datasheet IGBT

Manufacturer: WeEn

General Description

WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package.

This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

RoHS halogen-Free 2.

Overview

WG30R135W1 IGBT Rev.01 - 23 March 2024 Product data sheet 1.

Key Features

  • Reverse Conducting IGBT with Monolithic Body Diode.
  • Maximum Junction Temperature 175 °C.
  • Low Conduction Losses.
  • Positive Temperature efficient for Easy Parallel Operating.
  • EMI Improved Design 3.