Datasheet4U Logo Datasheet4U.com

WG50S65HAW1 Datasheet IGBT

Manufacturer: WeEn

General Description

WG50S65HAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance.

This device offers Best-inClass efficiency in hard switching and resonant topology.

RoHS halogen-Free 2.

Overview

WG50S65HAW1 IGBT Rev.02 - 25 November 2024 Product data sheet 1.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive Temperature efficient for easy paralleling.
  • Very soft, fast recovery anti-parallel diode.
  • High switching speed.
  • EMI Improved Design 3.