WG60N65MFW1 Description
WG60N65MFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO-247 package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.
WG60N65MFW1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for Easy Parallel Operating
- Very soft, fast recovery anti-parallel diode
- Smooth & Optimized switching
- EMI Improved Design