WeEn Semiconductors WMS20N270SE
WMS20N270SE is a high performance super logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.| Part No. | WMS20N270SE |
|---|---|
| Datasheet | WMS20N270SE Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Advance High Cell Density Trench Technology● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Switching Losses
● Optimized Gate Charge to Minimize Driver Losses
● 100% UIS Tested
● RoHS Compliant, Halogen Free and Lead Free 3.
APPLICATIONS
● DC−DC Converters● BLDC Motor Control
● Load Switch
● Lithium-ion Battery Protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions VGS = 4.5 V; Tmb = 25 °C Tmb = 25 °C Conditions VGS = 4.5 V, ID = 8 A VGS = 2.5 V, ID = 3 A QG(tot) total gate charge ID = 8 A; VDS = 10 V; VGS = 4.5 V Notes Values Unit 20 ±10 [1] 18 14 -55 to 150 Notes Min Typ Max V V A W °C Unit - 17 27 mΩ - 25 44 mΩ - 5.1 - nC WeEn Semiconductors 5. Pinning information Table 2.
