WeEn Semiconductors WMS30N045S
WMS30N045S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.| Part No. | WMS30N045S |
|---|---|
| Datasheet | WMS30N045S Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Advance High Cell Density Trench Technology● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Switching Losses
● Optimized Gate Charge to Minimize Driver Losses
● 100% UIS Tested
● RoHS Compliant, Halogen Free halogen-Free 3.
APPLICATIONS
● DC−DC Converters● BLDC Motor Control
● Load Switch
● Lithium-ion Battery Protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions VGS = 10 V; Tmb = 25 °C Tmb = 25 °C Conditions VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A QG(tot) total gate charge ID = 20 A; VDS = 15 V; VGS = 10 V Notes Values Unit 30 ±20 [1] 94 63 -55 to 150 Notes Min Typ Max V V A W °C Unit - 3.6 4.5 mΩ - 5.0 7.0 mΩ - 60 - nC WeEn Semiconductors 5. Pinning information Table 2.
