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WMS30N050E - N-Channel Silicon MOSFET

General Description

WMS30N050E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge.

It is designed and qualified in a wide range of industrial and consumer applications.

2.

Key Features

  • Advance High Cell Density Trench Technology.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Switching Losses.
  • Optimized Gate Charge to Minimize Driver Losses.
  • 100% UIS Tested.
  • RoHS Compliant, Halogen Free and Lead Free 3.

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Datasheet Details

Part number WMS30N050E
Manufacturer WeEn
File Size 598.14 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet WMS30N050E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WMS30N050E N-Channel Silicon MOSFET Rev.01 - 18 January 2023 Product data sheet 1. General description WMS30N050E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free Lead-Free 2. Features and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant, Halogen Free and Lead Free 3. Applications • DC−DC Converters • BLDC Motor Control • Load Switch • Lithium-ion Battery Protection 4.