WMS30N050E
description
WMS30N050E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h Ro HS alogen-Free
Lead-Free
2. Features and benefits
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- Ro HS pliant, Halogen Free and Lead Free
3. Applications
- DC- DC Converters
- BLDC Motor Control
- Load Switch
- Lithium-ion Battery Protection
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
VGS gate-source voltage
ID continuous drain current
Ptot power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state...
