WeEn Semiconductors WMS30N420K
WMS30N420K is a high performance logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.| Part No. | WMS30N420K |
|---|---|
| Datasheet | WMS30N420K Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High ESD sensitivity devices● Advance High Cell Density Trench Technology
● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Switching Losses
● Optimized Gate Charge to Minimize Driver Losses
● RoHS Compliant, Halogen Free and Lead Free 3.
APPLICATIONS
● Load Switch● General PWM
APPLICATIONS
4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions VGS = 10 V; Ta = 25 °C Ta = 25 °C Conditions VGS = 10 V, ID = 4.8 A VGS = 4.5 V, ID = 3 A QG(tot) total gate charge ID = 4.8 A; VDS = 15 V; VGS = 10 V Notes Values Unit 30 ±20 4.8 1.4 -55 to 150 Notes Min Typ Max V V A W °C Unit - 35 42 mΩ - 46 65 mΩ - 5.1 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning i...
