WeEn Semiconductors WMSC030H12B1P
N-Channel Silicon Carbide MOSFET Module
| Part No. | WMSC030H12B1P |
|---|---|
| Datasheet | WMSC030H12B1P Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon Carbide MOSFET Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Half bridge topology● PressFit pins technology
● Low RDSon
● Low Switching Losses
● Low Qg and Crss
● Low Inductive Design 3.
APPLICATIONS
● Power inverters● AC-DC converters
● DC-DC converters
● Active power factor correctors
● Motor drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Notes Values Absolute maximum rating VDS drain-source voltage Tj = 25 °C 1200 ID drain current VGS = 18 V; Th = 25 °C 53 Ptot total power dissipation Th = 25 °C 111 Tj junction temperature -40 to 150 Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Conditions VGS = 15 V; ID = 45 A; Tj = 25 °C VGS = 18 V; ID = 45 A; Tj = 25 °C Notes Min Typ Max - 30 - - 24 - Dynamic characteristics QG(tot) QGD total gate charge gate-drain charge ID = 45 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C - 162 - - 26 - Source-drain diode Qr recovered charge ISD = 45 A; VGS = -4 V; di/dt = 8500 A/μs; VR = 600 V; Tj = 25 °C - 592 - Unit V A W °C Unit mΩ mΩ nC nC nC WeEn Semiconductors 5.
