WMSC040S12B1P Datasheet PDF (N-Channel Silicon Carbide MOSFET)

WMSC040S12B1P - N-Channel Silicon Carbide MOSFET

Description

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.

NTC temperature sensor inside.

Features

3-phase full bridge topology.
Press-fit pin configuration.
Low ON resistance.
Low switching losses.
Reduced Qg and Crss.
Minimized circuit impedance.
Robust product design 3.

Datasheet Details

Part number	WMSC040S12B1P
Manufacturer	WeEn
File Size	888.86 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WMSC040S12B1P Datasheet

📁 Similar Datasheet

WMS-42PLUS3 - Display User Manual (ETC)

WMS128K8-xxx - 128Kx8 MONOLITHIC SRAM (White Electronic Designs)

WMS256K16-xxx - 256Kx16 MONOLITHIC SRAM (White Electronic Designs)

WMS512K8-xxx - 512Kx8 MONOLITHIC SRAM (White Electronic Designs)

WMS512K8V-xxx - 512Kx8 MONOLITHIC SRAM (WED)

WMS7100 - (WMS7100 / WMS7101) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7101 - (WMS7100 / WMS7101) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7140 - (WMS7140 / WMS7141) NONVOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7141 - (WMS7140 / WMS7141) NONVOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7170 - (WMS7170 / WMS7171) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

Full PDF Text Transcription

Click to expand full text

WMSC040S12B1P N-Channel Silicon Carbide MOSFET Module Rev.01 - 07 June 2024 Product data sheet 1. General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type. NTC temperature sensor inside. h RoHS alogen-Free 2. Features and benefits • 3-phase full bridge topology • Press-fit pin configuration • Low ON resistance • Low switching losses • Reduced Qg and Crss • Minimized circuit impedance • Robust product design 3. Applications • EV chargers • Energy storage and solar energy systems • Power Inverters • AC/DC converters • Power factor correctors • Motor drives 4. Quick reference data Table 1.

Published: Mar 9, 2025 |