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WN3S10S200CBT - Dual power Schottky diode

General Description

Dual common cathode power Schottky diode in TO263 (D2PAK) package.

2.

Key Features

  • High junction temperature up to 175 °C.
  • Low forward voltage drop, negligible switching losses.
  • High efficiency 3.

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Datasheet Details

Part number WN3S10S200CBT
Manufacturer WeEn
File Size 433.26 KB
Description Dual power Schottky diode
Datasheet download datasheet WN3S10S200CBT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WN3S10S200CBT Dual power Schottky diode Rev.01 - 21 April 2023 Product data sheet 1. General description Dual common cathode power Schottky diode in TO263 (D2PAK) package. RoHS halogen-Free 2. Features and benefits • High junction temperature up to 175 °C • Low forward voltage drop, negligible switching losses • High efficiency 3. Applications • DC to DC converters • Freewheeling diode • OR-ing diode • Switched mode power supply rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 159 °C; per diode; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.