WeEn Semiconductors WN3S30H60CX
The heat generated must be less than the thermal conductivity from Junction to Ambient: dPtot/dTj < 1/Rth(j-a) Unit V V V A A A A °C °C Fig.| Part No. | WN3S30H60CX |
|---|---|
| Datasheet | WN3S30H60CX Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Dual power Schottky diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Trench structure● High junction temperature up to 150°C
● Low forward voltage drop, negligible switching losses
● High efficiency halogen-Free 3.
APPLICATIONS
● DC to DC converters● Freewheeling diode
● OR-ing diode
● Switched mode power supply rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5 ; square-wave pulse; both diodes conducting Symbol Parameter Conditions Static characteristics VF forward voltage IF = 15 A; Tj = 25 °C; per diode; Fig. 6 IR reverse current VR = 60 V; Tj = 25 °C; per diode; Fig. 7; Fig. 8 Notes Notes Min - Values Unit 60 V 15 A 30 A Typ Max Unit 0.57 0.65 V 40 100 μA WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 A1 anode 1 2 K cathode 3 A2 anode 2 mb n.c. mounting base; isolated Simplified outline mb WN3S30H60CX Dual power Schottky diode Graphic symbol A1 A2 K sym125 1 23 6.
