WeEn Semiconductors WNB111C5APTS
This document contains data from the objective specification for product development.| Part No. | WNB111C5APTS |
|---|---|
| Datasheet | WNB111C5APTS Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Hyperfast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Fast switching● Low leakage current
● Low forward voltage drop
● Soft recovery characteristic
● Bare die 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM * repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF ** forward voltage IF = 15 A; Tj = 150 °C Dynamic characteristics trr ** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C 4. Ordering information Table 2. Ordering information Type number Package Name WNB111C5APTS Wafer
DESCRIPTION
Bare die on wafer Product data sheet Min Typ Max Unit - - 600 V - - 15 A - 1.4 2 V - 13 18 ns Version Die WeEn Semiconductors WNB111C5APTS 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM * repetitive peak reverse voltage VRWM * crest working reverse voltage VR * reverse voltage DC IF(AV)** average forward curr...
