WeEn Semiconductors WNB111S5APTS
This document contains data from the objective specification for product development.| Part No. | WNB111S5APTS |
|---|---|
| Datasheet | WNB111S5APTS Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Ultrafast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Fast reverse recovery● Low leakage current
● Low forward voltage drop
● Bare die 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics trr** reverse recovery time IF = 15 A; Tj = 25 °C IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 4. Ordering information Table 2. Ordering information Type number Package Name
DESCRIPTION
WNB111S5APTS Wafer Bare die on wafer Product data sheet Min Typ Max Unit - - 600 V - - 15 A - 1.4 1.8 V - 28 60 ns Version Die WeEn Semiconductors WNB111S5APTS Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* VRWM* VR* IF(AV)** IFRM** IFSM** Tstg** Tj** repetitive peak reverse voltage crest working reverse voltage reverse v...
