WeEn Semiconductors WNB199V5APTS
This document contains data from the objective specification for product development.| Part No. | WNB199V5APTS |
|---|---|
| Datasheet | WNB199V5APTS Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Ultrafast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Fast switching and soft reverse recovery characteristics● Low forward voltage drop
● Low leakage current
● Low reverse recovery current
● Bare die 3. Quick reference data Table 1. Quick reference data Symbol VRRM* Parameter repetitive peak reverse voltage Conditions IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 60 A; Tj = 25 °C IF = 60 A; Tj = 150 °C trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C Min Typ Max Unit - - 600 V - - 60 A - 1.55 2 V - - 1.6 V - - 55 ns 4. Ordering information Table 2. Ordering information Type number Orderable part number WNB199V5APTS WNB199V5APTSV Name Wafer
DESCRIPTION
Bare die on wafer Version Die WeEn Semiconductors WNB199V5APTS Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive...
