WeEn Semiconductors WNB2560M
Bridge Diode
FEATURES AND BENEFITS
● Thin-SIP● Low forward voltage drop
● High voltage capability
● High inrush current capability
● High operating temperature capability (Tj (max) = 150°C)
● UL Recognition file # E346397 3.
APPLICATIONS
● Power supplies● Rectifiers for DC motor field supplies
● Battery charger rectifiers
● Inverter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) IFSM repetitive peak reverse voltage average forward current non-repetitive peak forward current δ = 0.5; square-wave pulse; Tc ≤ 127 °C; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Symbol Parameter Static characteristics Conditions VF forward voltage IF = 12.5 A; Tj = 25 °C; per diode; Fig. 6 Values Unit 600 V 25 A 300 A 330 Min Typ A Max Unit - 0.87 0.92 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Simplified outline Graphic symbol WNB2560M Bridge Diode æ ç èé __ æ çè é 6.